Hopping Conduction in Disordered Carbon Nanotubes

Details Hopping Conduction in Disordered Carbon Nanotubes Hopping Conduction in Disordered Carbon Nanotubes

2006-10-26

arxiv.org/abs/cond-mat/0610747v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 5 figures

Scientific paper

We report electrical transport measurements on individual disordered carbon nanotubes, grown catalytically in a nanoporous anodic aluminum oxide template. In both as-grown and annealed types of nanotubes, the low-field conductance shows as exp[-(T_{0}/T)^{1/2}] dependence on temperature T, suggesting that hopping conduction is the dominant transport mechanism, albeit with different disorder-related coefficients T_{0}. The field dependence of low-temperature conductance behaves an exp[-(xi_{0}/xi)^{1/2}] with high electric field xi at sufficiently low T. Finally, both annealed and unannealed nanotubes exhibit weak positive magnetoresistance at low T = 1.7 K. Comparison with theory indicates that our data are best explained by Coulomb-gap variable range hopping conduction and permits the extraction of disorder-dependent localization length and dielectric constant.

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