Hole spin relaxation in $p$-type GaAs quantum wires

Details Hole spin relaxation in $p$-type GaAs quantum wires Hole spin relaxation in $p$-type GaAs quantum wires

2008-08-08

arxiv.org/abs/0808.1170v2

Phys. Rev. B 78, 165321 (2008)

Physics

Condensed Matter

Materials Science

10 pages, 7 figures, Phys. Rev. B 78, 2008, in press

Scientific paper

10.1103/PhysRevB.78.165321

We investigate the spin relaxation of $p$-type GaAs quantum wires by numerically solving the fully microscopic kinetic spin Bloch equations. We find that the quantum-wire size influences the spin relaxation time effectively by modulating the energy spectrum and the heavy-hole--light-hole mixing of wire states. The effects of quantum-wire size, temperature, hole density, and initial polarization are investigated in detail. We show that, depending on the situation, the spin relaxation time can either increase or decrease with hole density. Due to the different subband structure and effects arising from spin-orbit coupling, many spin-relaxation properties are quite different from those of holes in the bulk or in quantum wells, and the inter-subband scattering makes a marked contribution to the spin relaxation.

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