Hole spin dynamics under π pulse excitation

Physics – Condensed Matter

Scientific paper

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Time-Resolved Optical Spectroscopies And Other Ultrafast Optical Measurements In Condensed Matter, Dynamics Of Nonlinear Optical Systems, Optical Instabilities, Optical Chaos And Complexity, And Optical Spatio-Temporal Dynamics, Optical Bistability, Multistability, And Switching, Including Local Field Effects

Scientific paper

The control and dynamical properties of the valence-band hole spin in tetrahedral semiconductors subjected to an ultrashort π -type electric field pulse are presented. Using a concept of the hole spin surface [

Phys. Status Solidi B 241, 145 (2004)
], it is shown that the control of spin of a ballistic hole having a well-defined wave vector and energy may be treated as the transitions between heavy, light, and split-off spin surfaces. Two types of spin transitions that are closely related to interband and intraband transfers of holes are introduced to explain the evolution of spin during excitation of holes by electrical π pulses. Numerical experiments using real valence bands of silicon are presented which show that the intervalence transitions due to interband tunneling give the largest contribution in the hole spin switching dynamics.

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