Hole-driven MIT theory, Mott transition in VO_2, MoBRiK

Details Hole-driven MIT theory, Mott transition in VO_2, MoBRiK Hole-driven MIT theory, Mott transition in VO_2, MoBRiK

2006-07-22

arxiv.org/abs/cond-mat/0607577v1

Physica C 460-462 (2007) 1076~1078

Physics

Condensed Matter

Strongly Correlated Electrons

2 pages, 1 figures, This was presented in the 8th International Conference on Materials and Mechanisms of Superconductivity an

Scientific paper

10.1016/j.physc.2007.03.356

For inhomogeneous high-T_c superconductors, hole-driven metal-insulator transition (MIT) theory explains that the gradual increase of conductivity with increasing hole doping is due to inhomogeneity with the local Mott system undergoing the first-order MIT and the local non-Mott system. For VO_2, a monoclinic and correlated metal (MCM) phase showing the linear characteristic as evidence of the Mott MIT is newly observed by applying electric field and temperature. The structural phase transition occurs between MCM and Rutile metal phases. Devices using the MIT are named MoBRiK.

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