Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor

Details Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor

2007-11-30

arxiv.org/abs/0711.4936v3

Physics

Condensed Matter

Other Condensed Matter

4 pages, 3 figures

Scientific paper

10.1063/1.2968123

We have investigated radio-frequency single-electron transistor (RF-SET) operation of single-walled carbon nanotube quantum dots in the strong tunneling regime. At 4.2 K and carrier frequency 754.2 MHz, we reach a charge sensitivity of 2.3e-6 e/Hz^(1/2) over a bandwidth of 85 MHz. Our results indicate a gain-bandwidth product of 3.7e13 Hz^(3/2)/e, which is by one order of magnitude better than for typical RF-SETs.

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