Highly p-doped graphene obtained by fluorine intercalation

Details Highly p-doped graphene obtained by fluorine intercalation Highly p-doped graphene obtained by fluorine intercalation

2011-04-14

arxiv.org/abs/1104.2812v1

Physics

Condensed Matter

Materials Science

4 pages, 2 figures, in print APL

Scientific paper

10.1063/1.3586256

We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p \approx 4.5 \times 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED .

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