Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers

Details Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers

2002-10-19

arxiv.org/abs/cond-mat/0210426v1

Appl. Phys. Lett. 82, 2302 (2003)

Physics

Condensed Matter

Materials Science

pdf file only

Scientific paper

10.1063/1.1564285

We report Curie temperatures up to 150 K in annealed Ga1-xMnxAs epilayers grown with a relatively low As:Ga beam equivalent pressure ratio. A variety of measurements (magnetization, Hall effect, magnetic circular dichroism and Raman scattering) show that the higher ferromagnetic transition temperature results from an enhanced free hole density. The data also indicate that, in addition to the carrier concentration, the sample thickness limits the maximum attainable Curie temperature in this material - suggesting that the free surface of Ga1-xMnxAs epilayers is important in determining their physical properties.

Affiliated with

Also associated with

No associations

Rating

Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-197501