Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode

Details Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode

2002-08-16

arxiv.org/abs/cond-mat/0208325v2

Jpn. J. Appl. Phys. Vol.42 No.5B pp.L502 - L504 (2003)

Physics

Condensed Matter

Materials Science

Scientific paper

We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations of at least 24% at 80K and 12% at room temperature.

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