High-Transconductance Graphene Solution-Gated Field Effect Transistors

Details High-Transconductance Graphene Solution-Gated Field Effect Transistors High-Transconductance Graphene Solution-Gated Field Effect Transistors

2011-05-31

arxiv.org/abs/1105.6332v1

Appl. Phys. Lett. 99, 033503 (2011)

Physics

Condensed Matter

Materials Science

The following article has been submitted to Applied Physics Letters. After it is published, it will be found at apl.aip.org

Scientific paper

10.1063/1.3614445

In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor deposition grown graphene on Cu exhibit high transconductances, which are a consequence of the high mobility of charge carriers in graphene and the large capacitance at the graphene/water interface. The performance of graphene SGFETs, in terms of gate sensitivity, is compared to other SGFET technologies and found to be clearly superior, confirming the potential of graphene SGFETs for sensing applications in electrolytic environments.

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