High temperature thermoelectric response of double-doped SrTiO$_3$ epitaxial films

Details High temperature thermoelectric response of double-doped SrTiO$_3$ epitaxial films High temperature thermoelectric response of double-doped SrTiO$_3$ epitaxial films

2010-11-08

arxiv.org/abs/1011.1882v1

Phys. Rev. B 82, 165126 (2010)

Physics

Condensed Matter

Materials Science

Published version, 6 pages, 6 figures link: http://prb.aps.org/abstract/PRB/v82/i16/e165126

Scientific paper

10.1103/PhysRevB.82.165126

SrTiO$_3$ is a promising $n$-type oxide semiconductor for thermoelectric energy conversion. Epitaxial thin films of SrTiO$_3$ doped with both La and oxygen vacancies have been synthesized by pulsed laser deposition (PLD). The thermoelectric and galvanomagnetic properties of these films have been characterized at temperatures ranging from 300 K to 900 K and are typical of a doped semiconductor. Thermopower values of double-doped films are comparable to previous studies of La doped single crystals at similar carrier concentrations. The highest thermoelectric figure of merit ($ZT$) was measured to be 0.28 at 873 K at a carrier concentration of $2.5\times10^{21}$ cm$^{-3}$.

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