High temperature electronic behavior of La0.8Sr0.2MnO3 thin film

Details High temperature electronic behavior of La0.8Sr0.2MnO3 thin film High temperature electronic behavior of La0.8Sr0.2MnO3 thin film

2003-01-21

arxiv.org/abs/cond-mat/0301385v1

Physics

Condensed Matter

Strongly Correlated Electrons

10 pages, 4 figures. submitted to Phys. Rev. B

Scientific paper

The electronic structure of La0.8Sr0..2MnO3/SrTiO thin film, which was prepared by Laser MBE, was studied by X-ray photoemission spectra (XPS) in the temperature interval of 300 to 1000 K. Experimental results showed that the electronic state of the thin film underwent a discontinuous variation between 350 K and 450 K, indicating that the metal-semiconductor transition was probably a discontinuous phase transition. At high temperature (450 to 1000 K), both the binding energies of the atomic core level and valence-band of the film shifted up with increasing the temperature, while their line-widths became narrower, which were different from that observed at low temperature. These phenomena are attributed to the crystal lattice expansion and related Jahn-Teller distortion varying with temperature.

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