High-Tc BaTiO3 ferroelectric films with frozen negative pressure states

Details High-Tc BaTiO3 ferroelectric films with frozen negative pressure states High-Tc BaTiO3 ferroelectric films with frozen negative pressure states

2011-02-22

arxiv.org/abs/1102.4473v1

Physics

Condensed Matter

Materials Science

14 pages, 4 figures

Scientific paper

We report that an energetic plasma process is extremely effective in enlarging the unit cell volume and ferroelectric distortion of the ferroelectric oxides, resulting in a significant increase in its Tc. We demonstrate experimentally that c-axis oriented BaTiO3 films can be deposited directly on quartz glass and Si substrates using such a process and that the material shows an approximately 5% expansion of its unit cell volume and approximately 4 times the ferroelectric tetragonal distortion of the bulk crystals. Such a frozen negative pressure results in a Tc value that is approximately 580 K higher than that of bulk single crystals, providing a wide range of operating temperatures for the devices. The present results suggest an approach to producing ferroelectric oxides with unique properties that might be extended to ferromagnetic or superconductor oxides and demonstrate a route to a lead-free ferroelectric oxide for capacitive, ferroelectric memory, and electro-optical devices.

Affiliated with

Also associated with

No associations

Rating

High-Tc BaTiO3 ferroelectric films with frozen negative pressure states does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with High-Tc BaTiO3 ferroelectric films with frozen negative pressure states, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-Tc BaTiO3 ferroelectric films with frozen negative pressure states will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-558832