High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures

Details High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures

2011-02-09

arxiv.org/abs/1102.1835v2

Appl. Phys. Lett. 98, 141908 (2011)

Physics

Condensed Matter

Materials Science

3 pages, 3 figures

Scientific paper

10.1063/1.3575573

InGaN/GaN multiple quantum wells (MQWs) have been studied by using cathodoluminescence hyperspectral imaging with high spatial resolution. Variations in peak emission energies and intensities across trench-like features and V-pits on the surface of the MQWs are investigated. The MQW emission from the region inside trench-like features is red-shifted by approximately 45 meV and more intense than the surrounding planar regions of the sample, whereas emission from the V-pits is blue-shifted by about 20 meV and relatively weaker. By employing this technique to the studied nanostructures it is possible to investigate energy and intensity shifts on a 10 nm length scale.

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