High Quality, Transferable Graphene Grown on Single Crystal Cu(111) Thin Films on Basal-Plane Sapphire

Details High Quality, Transferable Graphene Grown on Single Crystal Cu(111) Thin Films on Basal-Plane Sapphire High Quality, Transferable Graphene Grown on Single Crystal Cu(111) Thin Films on Basal-Plane Sapphire

2010-12-07

arxiv.org/abs/1012.1588v2

Applied Physics Letters, 98 (2011) 113117

Physics

Condensed Matter

Materials Science

10 pages, 3 figures

Scientific paper

10.1063/1.3569143

The current method of growing large-area graphene on Cu surfaces (polycrystalline foils and thin films) and its transfer to arbitrary substrates is technologically attractive. However, the quality of graphene can be improved significantly by growing it on single-crystal Cu surfaces. Here we show that high quality, large-area graphene can be grown on epitaxial single-crystal Cu(111) thin films on reusable basal-plane sapphire (alpha-Al2O3(0001)) substrates and then transferred to another substrate. While enabling graphene growth on Cu single-crystal surfaces, this method has the potential to avoid the high cost and extensive damage to graphene associated with sacrificing bulk single-crystal Cu during graphene transfer.

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