Physics
Scientific paper
Dec 2009
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2009njph...11l5019g&link_type=abstract
New Journal of Physics, Volume 11, Issue 12, pp. 125019 (2009).
Physics
5
Scientific paper
We report the development of InGaAsN-based gain mirrors for high-power optically pumped semiconductor disk lasers with direct emission at wavelengths around 1180 nm. The gain mirrors were fabricated by molecular beam epitaxy. They consist of 10 dilute nitride quantum wells, which were placed within a GaAs micro-cavity on top of a GaAs/AlAs distributed Bragg reflector. We demonstrated laser operation at ~1180 nm with record high output power (~7 W). The differential efficiency was ~30% for operation at 5 °C and ~28% when operating at 15 °C. The lasers exhibited excellent tuning characteristics, delivering an output power of more than 5 W in a narrow spectrum and providing over 30 nm tuning band. These features represent significant progress towards demonstration of practical high-power lasers with frequency-doubled yellow emission required for laser guide stars, life sciences and spectroscopy. At the same time the results emphasize the importance of dilute nitride heterostructures in the development of novel optoelectronic devices.
Guina M.
Härkönen A.
Leinonen T.
Pessa Markus
No associations
LandOfFree
High-power disk lasers based on dilute nitride heterostructures does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with High-power disk lasers based on dilute nitride heterostructures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-power disk lasers based on dilute nitride heterostructures will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-1704735