High-performance $n$-type organic field-effect transistors with ionic liquid gates

Details High-performance $n$-type organic field-effect transistors with ionic liquid gates High-performance $n$-type organic field-effect transistors with ionic liquid gates

2010-10-05

arxiv.org/abs/1010.0769v1

Physics

Condensed Matter

Materials Science

Scientific paper

High-performance $n$-type organic field-effect transistors were developed with ionic-liquid gates and N,N$^"$-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements show that these devices reproducibly operate in ambient atmosphere with negligible gate threshold voltage and mobility values as high as 5.0 cm$^2$/Vs. These mobility values are essentially identical to those measured in the same devices without the ionic liquid, using vacuum or air as the gate dielectric. Our results indicate that the ionic-liquid and $n$-type organic semiconductor interfaces are suitable to realize high-quality $n$-type organic transistors operating at small gate voltage, without sacrificing electron mobility.

Affiliated with

Also associated with

No associations

Rating

High-performance $n$-type organic field-effect transistors with ionic liquid gates does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with High-performance $n$-type organic field-effect transistors with ionic liquid gates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-performance $n$-type organic field-effect transistors with ionic liquid gates will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-86085