High-Performance, Hysteresis-Free Carbon Nanotube FETs via Directed Assembly

Details High-Performance, Hysteresis-Free Carbon Nanotube FETs via Directed Assembly High-Performance, Hysteresis-Free Carbon Nanotube FETs via Directed Assembly

2006-05-26

arxiv.org/abs/cond-mat/0605657v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

13 pages, 5 figures

Scientific paper

10.1063/1.2364461

High-performance single-wall carbon nanotube field-effect transistors (SWNT-FETs) are fabricated using directed assembly and mass-produced carbon nanotubes (CNTs). These FETs exhibit operating characteristics comparable to state-of-the-art devices, and the process provides a route to large-scale functional CNT circuit assembly that circumvents problems inherent in processes relying on chemical vapor deposition (CVD). Furthermore, the integration of hydrophobic self-assembled monolayers (SAMs) in the device structure eliminates the primary source of gating hysteresis in SWNT-FETs, which leads to hysteresis-free FET operation while exposing unmodified nanotube surfaces to ambient air.

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