High-Performance Carbon Nanotube Transistors on SrTiO3/Si Substrates

Details High-Performance Carbon Nanotube Transistors on SrTiO3/Si Substrates High-Performance Carbon Nanotube Transistors on SrTiO3/Si Substrates

2004-01-28

arxiv.org/abs/cond-mat/0401591v1

Applied Physics Letters 84, 1946 (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

13 pages, 1 table, 3 figures, to appear in Appl. Phys. Lett

Scientific paper

10.1063/1.1682691

Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 S/m. The high transconductance cannot be explained by the increased gate capacitance; it is proposed that the increased electric field at the nanotube-electrode interface due to the high-kappa SrTiO3 decreases or eliminates the nanotube-electrode Schottky barrier.

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