High-Performance Carbon Nanotube Field-Effect Transistor with Tunable Polarities

Details High-Performance Carbon Nanotube Field-Effect Transistor with Tunable Polarities High-Performance Carbon Nanotube Field-Effect Transistor with Tunable Polarities

2005-01-28

arxiv.org/abs/cond-mat/0501690v1

IEEE Trans. Nanotechnology Vol. 4 (5), pp.481--489, 2005

Physics

Condensed Matter

Materials Science

26 pages, 12 figures, accepted for IEEE Trans. Nanotechnology

Scientific paper

10.1109/TNANO.2005.851427

State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing the oxide thickness also results in pronounced ambipolar transistor characteristics and increased drain leakage currents. Using a novel device concept, we have fabricated high-performance, enhancement-mode CNFETs exhibiting n or p-type unipolar behavior, tunable by electrostatic and/or chemical doping, with excellent OFF-state performance and a steep subthreshold swing (S =63 mV/dec). The device design allows for aggressive oxide thickness and gate length scaling while maintaining the desired device characteristics.

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