High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors

Details High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors

2011-01-17

arxiv.org/abs/1101.3123v1

IEEE IEDM Tech. Dig., 736-739, 2010

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 11 figures

Scientific paper

In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate the device, a self-consistent Non-Equilibrium Green's Function (NEGF) solver has been developed and validated against published experimental data. Using the simulator, we predict an on-off ratio in excess of $10^4$ and a subthreshold slope of ~110mV/decade with excellent scalability and current saturation, for a 20nm gate length unipolar BLG FET. However, the performance of the proposed device is found to be strongly dependent on the S/D series resistance effect. The obtained results show significant improvements over existing reports, marking an important step towards bilayer graphene logic devices.

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