High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces

Details High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces

2012-01-17

arxiv.org/abs/1201.3662v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures, submitted to Applied Physics Letters

Scientific paper

We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative gate voltage applied across a vacuum cavity. Hole densities up to $7.5\times10^{11}$ cm$^{-2}$ are obtained, and the peak hole mobility is about $10^4$ cm$^2$/Vs at 70 mK. The quantum Hall effect is observed. Shubnikov-de Haas oscillations show a beating pattern due to the spin-orbit effects, and the inferred zero-field spin splitting can be tuned by the gate voltage.

Affiliated with

Also associated with

No associations

Rating

High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-396042