High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces

Details High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces

2005-01-25

arxiv.org/abs/cond-mat/0501608v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

to appear in Applied Physics Letters

Scientific paper

10.1063/1.2001734

We have fabricated and characterized a field-effect transistor in which an electric field is applied through an encapsulated vacuum cavity and induces a two-dimensional electron system on a hydrogen-passivated Si(111) surface. This vacuum cavity preserves the ambient sensitive surface and is created via room temperature contact bonding of two Si substrates. Hall measurements are made on the H-Si(111) surface prepared in aqueous ammonium fluoride solution. We obtain electron densities up to $6.5 \times 10^{11}$ cm$^{-2}$ and peak mobilities of $\sim 8000$ cm$^{2}$/V s at 4.2 K.

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