Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2006-06-02
Appl. Phys. Lett. 89, 172118 (2006).
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
3 pages, 3 figures, submitted for publication
Scientific paper
10.1063/1.2370504
Employing state-of-the-art molecular beam epitaxy techniques to grow thin, modulation-doped AlAs quantum wells, we have achieved a low temperature mobility of 5.5 m$^2$/Vs with out-of-plane occupation, an order of magnitude improvement over previous studies. However, due to the narrow well width, mobilities are still limited by scattering due to interface roughness disorder. We demonstrate the successful implementation of a novel technique utilizing thermally-induced, biaxial, tensile strain that forces electrons to occupy the out-of-plane valley in thicker quantum wells, reducing interface roughness scattering and allowing us to achieve mobilities as high as 8.8 m$^2$/Vs.
de Poortere E. P.
Padmanabhan Medini
Shayegan Mansour
Shkolnikov Y. P.
Tutuc Emanuel
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