High Magnetic Field Sensor Using LaSb2

Details High Magnetic Field Sensor Using LaSb2 High Magnetic Field Sensor Using LaSb2

2003-05-06

arxiv.org/abs/cond-mat/0305116v1

Physics

Condensed Matter

Materials Science

In press, APL

Scientific paper

10.1063/1.1577390

The magnetotransport properties of single crystals of the highly anisotropic layered metal LaSb2 are reported in magnetic fields up to 45 T with fields oriented both parallel and perpendicular to the layers. Below 10 K the perpendicular magnetoresistance of LaSb2} becomes temperature independent and is characterized by a 100-fold linear increase in resistance between 0 and 45 T with no evidence of quantum oscillations down to 50 mK. The Hall resistivity is hole-like and gives a high field carrier density of n ~ 3x10^20 cm^-3. The feasibility of using LaSb2 for magnetic field sensors is discussed.

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