High Kondo temperature (TK ~ 80 K) in self-assembled InAs quantum dots laterally coupled to nanogap electrodes

Details High Kondo temperature (TK ~ 80 K) in self-assembled InAs quantum dots laterally coupled to nanogap electrodes High Kondo temperature (TK ~ 80 K) in self-assembled InAs quantum dots laterally coupled to nanogap electrodes

2008-08-19

arxiv.org/abs/0808.2535v1

Appl. Phys. Lett. 93, 062101 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures

Scientific paper

10.1063/1.2968206

We have fabricated single electron tunneling structures by forming nanogap metallic electrodes directly upon single self-assembled InAs quantum dots (QDs). The fabricated samples exhibited clear Coulomb blockade effects. Furthermore, a clear Kondo effect was observed when strong coupling between the electrodes and the QDs was realized using a large QD with a diameter of ~ 100 nm. From the temperature dependence of the linear conductance at the Kondo valley, the Kondo temperature TK was determined to be ~ 81 K. This is the highest TK ever reported for artificial quantum nanostructures.

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