High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime

Details High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime

2004-11-19

arxiv.org/abs/cond-mat/0411513v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Accepted for publication in PRB

Scientific paper

10.1103/PhysRevB.71.045333

The interaction of surface acoustic waves (SAW) with $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures has been studied for SAW frequencies of 30-300 MHz. For temperatures in the range 0.7$

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