Physics – Condensed Matter – Materials Science
Scientific paper
2003-09-19
Physics
Condensed Matter
Materials Science
5 pages, 2 figures, (v2) new plot with a dependence of current J on magnetic field H added in Fig.2 (top panel), minor amendme
Scientific paper
10.1103/PhysRevLett.92.098302
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is described. The FM-S-FM structure is considered, which includes very thin heavily doped (delta-doped) layers at FM-S interfaces. At certain parameters the structure is highly sensitive at room-temperature to variations of the field with frequencies up to 100 GHz. The current oscillates with the field, and its relative amplitude is determined only by the spin polarizations of FM-S junctions at relatively large bias voltage.
Bratkovsky Alexander M.
Osipov Vasiliy
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