High-frequency performance of graphene field effect transistors with saturating IV-characteristics

Details High-frequency performance of graphene field effect transistors with saturating IV-characteristics High-frequency performance of graphene field effect transistors with saturating IV-characteristics

2011-12-13

arxiv.org/abs/1112.2777v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

IEDM 2011

Scientific paper

High-frequency performance of graphene field-effect transistors (GFETs) with
boron-nitride gate dielectrics is investigated. Devices show saturating IV
characteristics and fmax values as high as 34 GHz at 600-nm channel length.
Bias dependence of fT and fmax and the effect of the ambipolar channel on
transconductance and output resistance are also examined.

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