High Field Mobility and Diffusivity of Electron Gas in Silicon Devices

Details High Field Mobility and Diffusivity of Electron Gas in Silicon Devices High Field Mobility and Diffusivity of Electron Gas in Silicon Devices

2000-03-28

arxiv.org/abs/cond-mat/0003457v1

Physics

Condensed Matter

Statistical Mechanics

15 pages, Latex, 5 figures (postscript) included in the text

Scientific paper

In this paper the Boltzmann equation describing the carrier transport in a semiconductor is considered. A modified Chapman-Enskog method is used, in order to find approximate solutions in the weakly non-homogeneous case. These solutions allow to calculate the mobility and diffusion coefficients as function of the electric field. The integral-differential equations derived by the above method are numerically solved by means of a combination of spherical harmonics functions and finite-difference operators. The Kane model for the electron band structure is assumed; the parabolic band approximation is obtained as a particular case. The numerical values for mobility and diffusivity in a silicon device are compared with the experimental data. The Einstein relation is also shown.

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