High-field magnetoresistance of Fe/GaAs/Fe tunnel junctions

Details High-field magnetoresistance of Fe/GaAs/Fe tunnel junctions High-field magnetoresistance of Fe/GaAs/Fe tunnel junctions

2004-04-15

arxiv.org/abs/cond-mat/0404351v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

12 pages, 4 figures, submitted to Appl. Phys. Lett

Scientific paper

10.1063/1.1774255

We investigate transport through 6 to 10 nm thin epitaxial GaAs(001) barriers sandwiched between polycrystalline iron films. Apart from a pronounced tunneling magnetoresistance effect (TMR) at low magnetic fields we observe a distinct negative magnetoresistance (MR) at low and a positive MR at higher temperatures. We show that the negative MR contribution is only observed for the ferromagnetic iron contacts but is absent if iron is replaced by copper or gold electrodes. Possible explanations of the negative MR involve suppression of spin-flip scattering or Zeeman splitting of the tunneling barrier.

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