High-field Current-carrying Capacity of Semiconducting Carbon Nanotubes

Details High-field Current-carrying Capacity of Semiconducting Carbon Nanotubes High-field Current-carrying Capacity of Semiconducting Carbon Nanotubes

2008-04-24

arxiv.org/abs/0804.3997v2

Physics

Condensed Matter

Materials Science

5 pages, 5 figures

Scientific paper

It is shown that current saturation in semiconducting carbon nanotubes is indistinguishable from metallic nanotubes if the carrier density is above a critical value determined by the bandgap and the LO phonon energy. This feature stems from the higher number of current-carrying states in the semiconducting tubes due to the van-Hove singularity at the band-edge. Above this critical carrier density, the ensemble saturation velocity at high-fields is found to be independent of the bandgap, but strongly dependent on the carrier density, explaining recent observations.

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