Physics – Condensed Matter – Materials Science
Scientific paper
2005-04-02
Phys. Rev. B Vol.72, 085216 (2005)
Physics
Condensed Matter
Materials Science
6pages, 10figures. To be published to Phys. Rev. B
Scientific paper
10.1103/PhysRevB.72.085216
We have studied the electronic structure of the diluted magnetic semiconductor Ga$_{1-x}$Mn$_{x}$N ($x$ = 0.0, 0.02 and 0.042) grown on Sn-doped $n$-type GaN using photoemission and soft x-ray absorption spectroscopy. Mn $L$-edge x-ray absorption have indicated that the Mn ions are in the tetrahedral crystal field and that their valence is divalent. Upon Mn doping into GaN, new state were found to form within the band gap of GaN, and the Fermi level was shifted downward. Satellite structures in the Mn 2$p$ core level and the Mn 3$d$ partial density of states were analyzed using configuration-interaction calculation on a MnN$_{4}$ cluster model. The deduced electronic structure parameters reveal that the $p$-$d$ exchange coupling in Ga$_{1-x}$Mn$_{x}$N is stronger than that in Ga$_{1-x}$Mn$_{x}$As.
Fujimori Atsushi
Hirata H.
Hwang Ing-Jye
Ishida Yasuchika
Kobayashi Mari
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