High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors

Details High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors

2009-02-05

arxiv.org/abs/0902.0875v1

Physics

Condensed Matter

Materials Science

published online in JACS

Scientific paper

10.1021/ja809848y

We have investigated the electron mobility on field-effect transistors based on PDIF-CN$_{2}$ single crystals. The family of the small molecules PDI8-CN$_{2}$ has been chosen for the promising results obtained for vapour-deposited thin film FETs. We used as gate dielectric a layer of PMMA (spinned on top of the SiO$_{2}$), to reduce the possibility of electron trapping by hydroxyl groups present at surface of the oxide. For these devices we obtained a room temperature mobility of 6 cm$^{2}$/Vs in vacuum and 3 cm$^{2}$/Vs in air. Our measurements demonstrate the possibility to obtain n-type OFETs with performances comparable to those of p-type devices.

Affiliated with

Also associated with

No associations

Rating

High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-25789