High domain wall velocity at zero magnetic field induced by low current densities in spin-valve nanostripes

Details High domain wall velocity at zero magnetic field induced by low current densities in spin-valve nanostripes High domain wall velocity at zero magnetic field induced by low current densities in spin-valve nanostripes

2008-10-20

arxiv.org/abs/0810.3576v2

Applied Physics Express 2 (2009) 023003

Physics

Condensed Matter

Materials Science

Published version, Applied Physics Express 2, 023003 (2009) http://dx.doi.org/10.1143/APEX.2.023003

Scientific paper

10.1143/APEX.2.023003

Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below $10^{12} \unit{A/m^2}$, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities.

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