High carrier mobility in transparent Ba1-xLaxSnO3 crystals with a wide band gap

Details High carrier mobility in transparent Ba1-xLaxSnO3 crystals with a wide band gap High carrier mobility in transparent Ba1-xLaxSnO3 crystals with a wide band gap

2012-04-20

arxiv.org/abs/1204.4657v1

Physics

Condensed Matter

Materials Science

Scientific paper

We discovered that perovskite (Ba,La)SnO3 can have excellent carrier mobility even though its band gap is large. The Hall mobility of Ba0.98La0.02SnO3 crystals with the n-type carrier concentration of \sim 8-10\times10 19 cm-3 is found to be \sim 103 cm2 V-1s-1 at room temperature, and the precise measurement of the band gap \Delta of a BaSnO3 crystal shows \Delta=4.05 eV, which is significantly larger than those of other transparent conductive oxides. The high mobility with a wide band gap indicates that (Ba,La)SnO3 is a promising candidate for transparent conductor applications and also epitaxial all-perovskite multilayer devices.

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