High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions

Details High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions

2008-02-25

arxiv.org/abs/0802.3647v1

Appl. Phys. Lett. 91, 132504 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

Low temperature (10K) high voltage bias dynamic conductivity (up to 2.7V) and shot noise (up to 1V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100) magnetic tunnel junctions, as a function of the magnetic state. The junctions show large tunnel magnetoresistance (185% at 300K and 330% at 4K). Multiple sign inversion of the magnetoresistance is observed for bias polarity when the electrons scan the electronic structure of the bottom Fe-C interface. The shot-noise shows a Poissonian character. This demonstrates a pure spin dependent direct tunneling mechanism and validates the high structural quality of the MgO barrier.

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