Hexagonal-to-Cubic Phase Transformation in GaN Nanowires by Ga+-Implantation

Details Hexagonal-to-Cubic Phase Transformation in GaN Nanowires by Ga+-Implantation Hexagonal-to-Cubic Phase Transformation in GaN Nanowires by Ga+-Implantation

2004-02-03

arxiv.org/abs/cond-mat/0402062v1

Physics

Condensed Matter

Materials Science

13 pages (Figures Included); Submitted to Nano Letters

Scientific paper

10.1063/1.1760593

Hexagonal to cubic phase transformation is studied in focused ion beam assisted Ga+-implanted GaN nanowires. Optical photoluminescence and cathodoluminescence studies along with high-resolution transmission electron microscopic structural studies are performed to confirm the phase transformation. In one possibility, sufficient accumulation of Ga from the implanted source might have reduced the surface energy and simultaneously stabilized the cubic phase. Other potential reason may be that the fluctuations in the short-range order induced by enhanced dynamic annealing (defect annihilation) with the irradiation process stabilize the cubic phase and cause the phase transformation.

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