Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High ON Current

Details Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High ON Current Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High ON Current

2011-03-15

arxiv.org/abs/1103.3052v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

To appear in IEEE Electron Device Letters, Volume 32, Issue 5

Scientific paper

10.1109/LED.2011.2112753

We propose a Heterojunction Vertical Tunneling FET and show using self-consistent ballistic quantum transport simulations that it can provide very steep subthreshold swings and high ON current, thereby improving the scalability of Tunnel FETs for high performance. The turn-on in pocket region of the device is dictated by modulation of heterojunction barrier height. The steepness of turn-on is increased because of simultaneous onset of tunneling in the pocket and the region underneath and also due to contribution to current by vertical tunneling in the pocket. These factors can be engineered by tuning heterojunction band offsets.

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