Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO

Details Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO

2008-08-14

arxiv.org/abs/0808.1956v2

Appl. Phys. Lett. 93, 162504 (2008)

Physics

Condensed Matter

Superconductivity

Submission: 31st July 2008, Accepted for publication in Appl. Phys. Lett

Scientific paper

10.1063/1.2996591

Epitaxial thin films of LaFeAsO were fabricated on MgO (001) and mixed-perovskite (La, Sr)(Al, Ta)O3 (001) single-crystal substrates by pulsed laser deposition using a Nd:YAG second harmonic source and a 10 at.% F-doped LaFeAsO disk target. Temperature dependences of the electrical resistivities showed no superconducting transition in the temperature range of 2-300 K, and were similar to those of undoped polycrystalline bulk samples. The transmittance spectrum exhibited a clear peak at ~0.2 eV, which is explained by ab-initio calculations.

Affiliated with

Also associated with

No associations

Rating

Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-584601