Heating of Two-Dimensional Holes in SiGe and the B = 0 Metal-Insulator Transition

Details Heating of Two-Dimensional Holes in SiGe and the B = 0 Metal-Insulator Transition Heating of Two-Dimensional Holes in SiGe and the B = 0 Metal-Insulator Transition

2001-07-23

arxiv.org/abs/cond-mat/0107457v1

Physics

Condensed Matter

latex ChauCorSub.tex, 5 files, 4 figures, 4 pages submitted to Phys. Rev. Lett

Scientific paper

We study the resistivity vs. electric field dependence $\rho(E)$ of a 2D hole system in SiGe close to the B=0 metal-insulator transition. Using $\rho$ as a ``thermometer'' to obtain the effective temperature of the holes $T_e(E)$, we find that the $\rho(E)$ dependence can be attributed to hole heating. The hole-phonon coupling involves weakly screened piezoelectric and deformation potentials compatible with previous measurements. The damping of the Shubnikov-de Haas oscillations gives the same $T_e$ values. Thus the $\rho(E)$ dependence and the $E$-field ``scaling'' do not provide additional evidence for a quantum phase transition (QPT). We discuss how to study, in general, true $E$-field scaling and extract the ratio of the QPT characteristic lengths.

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