Hard x-ray photoemission study of LaAlO3/LaVO3 multilayers

Details Hard x-ray photoemission study of LaAlO3/LaVO3 multilayers Hard x-ray photoemission study of LaAlO3/LaVO3 multilayers

2007-04-13

arxiv.org/abs/0704.1837v1

Phys. Rev. B 77, 045122 (2008)

Physics

Condensed Matter

Strongly Correlated Electrons

5 pages, 7 figures

Scientific paper

10.1103/PhysRevB.77.045122

We have studied the electronic structure of multilayers composed of a band insulator LaAlO$_3$ (LAO) and a Mott insulator LaVO$_3$ (LVO) by means of hard x-ray photoemission spectroscopy, which has a probing depth as large as $\sim 60 {\AA}$. The Mott-Hubbard gap of LVO remained open at the interface, indicating that the interface is insulating unlike the LaTiO$_3$/SrTiO$_3$ multilayers. We found that the valence of V in LVO were partially converted from V$^{3+}$ to V$^{4+}$ only at the interface on the top side of the LVO layer and that the amount of V$^{4+}$ increased with LVO layer thickness. We suggest that the electronic reconstruction to eliminate the polarity catastrophe inherent in the polar heterostructure is the origin of the highly asymmetric valence change at the LVO/LAO interfaces.

Affiliated with

Also associated with

No associations

Rating

Hard x-ray photoemission study of LaAlO3/LaVO3 multilayers does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Hard x-ray photoemission study of LaAlO3/LaVO3 multilayers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hard x-ray photoemission study of LaAlO3/LaVO3 multilayers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-730382