Hall Resistivity and Dephasing in the Quantum Hall Insulator

Details Hall Resistivity and Dephasing in the Quantum Hall Insulator Hall Resistivity and Dephasing in the Quantum Hall Insulator

1998-08-06

arxiv.org/abs/cond-mat/9808062v3

Phys. Rev. Lett. 82, 1253-6 (1999)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

RevTeX, 4 pages, 3 figures included with epsf.sty

Scientific paper

10.1103/PhysRevLett.82.1253

The longstanding problem of the Hall resistivity rho(x,y) in the Hall insulator phase is addressed using four-lead Chalker-Coddington networks. Electron interaction effects are introduced via a finite dephasing length. In the quantum coherent regime, we find that rho(x,y) scales with the longitudinal resistivity rho(x,x), and they both diverge exponentially with dephasing length. In the Ohmic limit, (dephasing length shorter than Hall puddles' size), rho(x,y) remains quantized and independent of rho(x,x). This suggests a new experimental probe for dephasing processes.

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