Hall-like effect induced by spin-orbit interaction

Details Hall-like effect induced by spin-orbit interaction Hall-like effect induced by spin-orbit interaction

1999-06-10

arxiv.org/abs/cond-mat/9906151v1

Phys. Rev. Lett., Vol.83, p.376, (1999)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages (RevTeX), 4 figures, will appear in Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.83.376

The effect of spin-orbit interaction on electron transport properties of a cross-junction structure is studied. It is shown that it results in spin polarization of left and right outgoing electron waves. Consequently, incoming electron wave of a proper polarization induces voltage drop perpendicularly to the direct current flow between source and drain of the considered four-terminal cross-structure. The resulting Hall-like resistance is estimated to be of the order of 10^-3 - 10^-2 h/e^2 for technologically available structures. The effect becomes more pronounced in the vicinity of resonances where Hall-like resistance changes its sign as function of the Fermi energy.

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