Hall effect of quasi-hole gas in organic single-crystal transistors

Details Hall effect of quasi-hole gas in organic single-crystal transistors Hall effect of quasi-hole gas in organic single-crystal transistors

2005-11-08

arxiv.org/abs/cond-mat/0511188v1

Jap. J. Appl. Phys. Vol. 44, No. 46, 2005, pp. L1393-L1396

Physics

Condensed Matter

Materials Science

Scientific paper

10.1143/JJAP.44.L1393

Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The presence of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system.

Affiliated with

Also associated with

No associations

Rating

Hall effect of quasi-hole gas in organic single-crystal transistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Hall effect of quasi-hole gas in organic single-crystal transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hall effect of quasi-hole gas in organic single-crystal transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-294349