Hall effect of epitaxial double-perovskite Sr_2FeMoO_6 thin films

Details Hall effect of epitaxial double-perovskite Sr_2FeMoO_6 thin films Hall effect of epitaxial double-perovskite Sr_2FeMoO_6 thin films

1999-08-25

arxiv.org/abs/cond-mat/9908361v2

Physics

Condensed Matter

Materials Science

4 pages, 4 EPS figures, to appear in J. Appl. Phys. (MMM99 Proceedings)

Scientific paper

10.1063/1.373241

We prepared high epitaxial thin films of the compound Sr_2FeMoO_6 with narrow rocking curves by pulsed laser deposition. The diagonal and nondiagonal elements of the resistivity tensor were investigated at temperatures from 4 K up to room temperature in magnetic fields up to 8 T. An electronlike ordinary Hall effect and a holelike anomalous Hall contribution are observed. Both coefficients have reversed sign compared to the colossal magnetoresistive manganites. We found at 300 K an ordinary Hall coefficent of -1.87x10^{-10} m^3/As, corresponding to a nominal charge carrier density of four electrons per formula unit. At low temperature only a small negative magnetoresistance is observed which vanishes at higher temperatures. The temperature coefficient of the resistivity is negative over the whole temperature range. A Kondo like behavior is observed below 30 K while above 100 K variable range hopping like transport occurs.

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