Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide

Details Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide

2009-07-29

arxiv.org/abs/0907.5026v1

Appl. Phys. Lett 95, 122102 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Accepted for publication in Applied Physics Letters, 10 pages, 2 figures

Scientific paper

10.1063/1.3224887

Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the growth face. About 40% of the samples exhibited holes as the dominant carrier, independent of face. Generally, mobilities increased with decreasing carrier density, independent of carrier type and substrate polytype. The contributions of scattering mechanisms to the conductivities of the films are discussed. The results suggest that for near-intrinsic carrier densities at 300 K epitaxial graphene mobilities will be ~150,000 cm2V-1s-1 on the (000-1) face and ~5,800 cm2V-1s-1 on the (0001) face.

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