Physics – Condensed Matter – Materials Science
Scientific paper
2003-06-18
Proc. NATO Workshop "Recent Trends in Theory of Physical Phenomena in High Magnetic Fields" eds. I. Vagner et al. (Kluwer, Dor
Physics
Condensed Matter
Materials Science
7 pages, 6 figures; NATO Advanced Research Workshop "Recent Trends on Physical Phenomena in High Magnetic Fields", Les Houches
Scientific paper
Recent works aiming at understanding magnetotransport phenomena in ferromagnetic III-V and II-VI semiconductors are described. Theory of the anomalous Hall effect in p-type magnetic semiconductors is discussed, and the relative role of side-jump and skew-scattering mechanisms assessed for (Ga,Mn)As and (Zn,Mn)Te. It is emphasized that magnetotransport studies of ferromagnetic semiconductors in high magnetic fields make it possible to separate the contributions of the ordinary and anomalous Hall effects, to evaluate the role of the spins in carrier scattering and localization as well as to determine the participation ratio of the ferromagnetic phase near the metal-insulator transition. A sizable negative magnetoresistance in the regime of strong magnetic fields is assigned to the weak localization effect.
Cibert Joel
Dietl Tomasz
Ferrand David
Matsukura Fumihiro
Ohno Hideo
No associations
LandOfFree
Hall effect and magnetoresistance in p-type ferromagnetic semiconductors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Hall effect and magnetoresistance in p-type ferromagnetic semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hall effect and magnetoresistance in p-type ferromagnetic semiconductors will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-50743