Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition

Details Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition

2010-06-22

arxiv.org/abs/1006.4376v1

Physical Review B 79, 153107 (2009)

Physics

Condensed Matter

Materials Science

Scientific paper

Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at the MIT and accounts almost entirely for the resistance change. The Hall mobility varies little across the MIT and remains low, ~0.1cm2/V sec. Electrons are found to be the major carriers on both sides of the MIT. Small positive magnetoresistance in the semiconducting phase is measured.

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