Half-metallicity and efficient spin injection in AlN/GaN:Cr (0001) heterostructure

Details Half-metallicity and efficient spin injection in AlN/GaN:Cr (0001) heterostructure Half-metallicity and efficient spin injection in AlN/GaN:Cr (0001) heterostructure

2004-10-18

arxiv.org/abs/cond-mat/0410455v1

Phys. Rev. Lett. 94, 146602 (2005)

Physics

Condensed Matter

Materials Science

submitted for publication

Scientific paper

10.1103/PhysRevLett.94.146602

First-principles investigations of the structural, electronic and magnetic properties of Cr-doped AlN/GaN (0001) heterostructures reveal that Cr segregates into the GaN region, that these interfaces retain their important half-metallic character and thus yield efficient (100 %) spin polarized injection from a ferromagnetic GaN:Cr electrode through an AlN tunnel barrier - whose height and width can be controlled by adjusting the Al concentration in the graded bandgap engineered Al(1-x)Ga(x)N (0001) layers.

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