Half integer quantum Hall effect in high mobility single layer epitaxial graphene

Details Half integer quantum Hall effect in high mobility single layer epitaxial graphene Half integer quantum Hall effect in high mobility single layer epitaxial graphene

2009-09-16

arxiv.org/abs/0909.2903v2

Appl. Phys. Lett. 95, 223108 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Some modifications in the text and figures, 7 pages, 2 figures

Scientific paper

10.1063/1.3266524

The quantum Hall effect, with a Berry's phase of $\pi$ is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is $\sim$ 20,000 cm$^2$/V$\cdot$s at 4 K and ~15,000 cm$^2$/V$\cdot$s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO$_2$ and an order of magnitude larger than Si-face epitaxial graphene monolayers. These and other properties indicate that C-face epitaxial graphene is a viable platform for graphene-based electronics.

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